| PART |
Description |
Maker |
| MAPL-000817-015CPC |
LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V
|
M/A-COM Technology Solutions, Inc.
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
SILICON POWER MOS FET
|
California Eastern Labs
|
| NE5550979A NE5550979A-T1 NE5550979A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| NE5550279A-T1 NE5550279A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| NE5550779A-T1A NE5550779A-T1-A NE5550779A-T1A-A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| NE552R479A NE552R479A-T1 NE552R479A-T1-A NE552R479 |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs
|
| PXFC192207FHV3R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ?1990 MHz
|
Infineon Technologies A...
|
